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  2.0a axial leaded ultrafast diode 1 of 2 UF2001 - uf2007 features a a b c d do-15 dim min max a 25.40  b 5.50 7.62 c 0.686 0.889 d 2.60 3.60 all dimensions in mm maximum ratings and electrical characteristics @ t a = 25  c unless otherwise specified  diffused junction  ultra-fast switching for high efficiency  high current capability and low forward voltage drop  surge overload rating to 60a peak  low reverse leakage current  plastic material: ul flammability classification rating 94v-0 mechanical data  case: molded plastic  terminals: plated leads solderable per mil-std-202, method 208  polarity: cathode band  marking: type number  weight: 0.4 grams (approx.)  mounting position: any single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol uf 2001 uf 2002 uf 2003 uf 2004 uf 2005 uf 2006 uf 2007 unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current (note 1) @ t a = 50  c i o 2.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 60 a forward voltage @ i f = 2.0a v fm 1.0 1.3 1.7 v peak reverse current @ t a = 25  c at rated dc blocking voltage @ t a = 100  c i rm 5.0 100  a reverse recovery time (note 3) t rr 50 75 ns typical junction capacitance (note 2) c j 50 30 pf typical thermal resistance junction to ambient r  ja 50 k/w operating and storage temperature range t j, t stg -65 to +150  c notes: 1. valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. measured at i f = 0.5a, i r = 1.0a, i rr = 0.25a. see figure 5.
2 of 2 0 0.4 0.8 1.2 1.6 2 . 0 25 50 75 100 125 150 175 200 i , a verage fwd rectified current (a) (a v) t , ambient temperature ( c) fi g . 1 forward current deratin g curve a single phase half-wave 60 hz resistive or inductive load 0.01 0.1 1.0 10 0.6 0.8 1.0 1.2 1.4 i , inst ant aneous for w ard current (a) f v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f t = 25 c j pulse width = 300 s UF2001 - uf2003 uf2005 - uf2007 uf2004 i , peak for w ard surge current (a) fsm 0 20 40 60 1 10 100 number of cycles at 60hz fi g . 3 peak forward sur g e current 50v dc approx 50 ni (non-inductive) ? 10 ni ? 1.0 ni ? oscilloscope (note 1) pulse generator (note 2) device under test t rr set time base for 50/100 ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . ? ? fi g . 5 reverse recover y time characteristic and test circuit (+) (+) (-) (-) 1 10 100 1 10 100 c , cap acit ance (pf) j v , reverse voltage (v) fi g .4 t y pical junction capacitance r t = 25 c f = 1.0mhz j


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